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Findings from O.M. Nayfeh and co-authors provide new insights into electron devices
June 9th, 2008
"Strained silicon-germanium (Si0.6Ge0.4) gated diodes have been fabricated and analyzed. The devices exhibit significantly enhanced gate-controlled tunneling current over that of coprocessed silicon control devices," scientists in the United States report. "The current characteristics are insensitive to measurement temperature in the 80 K to 300 K range. Independently extracted valence band offset at the strained Si0.6Ge0.4/Si interface is 0.4 eV, yielding a Si0.6Ge0.4 bandgap of 0.7 eV, which is much reduced compared to that of Si. The results are consistent with device operation based on quantum-mechanical hand-to-hand (BTB) tunneling rather than on thermal generation,"...
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Source: VerticalNews Electronics (2008-06-09)
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