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Ultrasonics, Ferroelectrics and Frequency Control
Study results from Y. Li et al provide new insights into ultrasonics, ferroelectrics and frequency control
November 3rd, 2010
New research, 'Study of the integrated growth of dielectric films on GaN semiconductor substrates,' is the subject of a report. "Typical perovskite oxides SrTiO3 (STO) and PbZr0.52Ti0.48O3 (PZT) were fabricated on GaN semiconductor substrates by pulsed laser deposition. STO and PZT films were deposited on bare GaN, TiO2, and MgO-buffered GaN," scientists writing in the journal Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control report. "The effects of TiO2 and MgO buffer-layers on the orientations and electric properties of the perovskite films were systematically studied. The crystalline properties were in situ monitored by reflective high...
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Source: VerticalNews Electronics (2010-11-03)
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