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New data from Kyungpook National University illuminate research in science
October 20th, 2009
"A plasma-doping (PLAID) process utilizing a PH3 plasma is presented to fabricate a n(+)/p ultra-shallow junction at room temperature. When PLAID is completed, an excimer laser annealing (ELA) process is performed using an ArF (193 run) excimer laser with pre-annealing," scientists writing in the Journal of the Korean Physical Society report.
"In our case) the pre-annealing is conducted for 5 min at 500 degrees C in a thermal furnace. The energy density of the excimer laser used for the ELA process ranged from 400 to 500 mJ/cm(2). Transmission electron microscope (TEM) and double-crystal X-ray diffraction (DXRD) measurements were employed to investigate defects on...
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Source: VerticalNews Technology (2009-10-20)