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Findings from AF Ioffe Phys Technical Institute in Physics Research Reported
February 21st, 2012
"The temperature dependences of the electrical and electroluminescent properties of InAsSbP/InAsSb/InAsSbP heterostructure LEDs (lambda a parts per thousand 3.8-4.0 mu m) are studied in the temperature interval 20-200A degrees C. It is shown that the radiation power decreases with increasing temperature in a superexponential manner and that this decrease is associated primarily with a rise in the rate of Auger recombination," investigators in St. Petersburg, Russia report. "The position of the maximum in the radiation spectrum varies with temperature nonmonotonically, since radiative recombination is observed both in the active region and in the wide-gap layer. At room...
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Source: VerticalNews Physics (2012-02-21)
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