Electronics Business Journal
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New applied physics research has been reported by scientists at University of Newcastle
March 24th, 2008
According to recent research published in the journal Applied Physics Letters, "The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization."
"Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the HfO2/SiC band offset while the larger one of 2.2 eV is due to the interfacial SiO2/SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for HfO2 on SiC without interfacial SiO2," wrote R. Mahapatra and colleagues, University of...
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Source: Electronics Business Journal (2008-03-24)