Electronics Business Journal
Welcome to VerticalNews!
We're a pay-per-view site for premium content. If you'd like to purchase this article, it's only $3.00.
Study results from University of Ulsan broaden understanding of electronics
November 5th, 2008
"Aluminium nitride (AlN) thin films were deposited on a polycrystalline (poly) 3C-SiC layer by a pulsed reactive magnetron sputtering system. The columnar structure of AlN thin films was observed by FE-SEM," scientists in South Korea report.
"The surface roughness of AlN films on the 3C-SiC layer was 9.3 nm. The X-ray diffraction pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum of the rocking curve near (002) reflections was 1.38. The infrared absorbance spectrum indicated that the residual stress of AlN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the...
Click here for more articles from Electronics
Source: Electronics Business Journal (2008-11-05)