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Device and Materials Reliability
Studies from Y.Z. Chiou et al provide new data on device and materials reliability
April 7th, 2010
"This paper proposes a new method of analyzing the reliability of GaN metal-semiconductor-metal (MSM) photodetectors (PDs). This paper analyzes and characterizes the reliability of GaN MSM PDs with TiW electrodes under different stressing conditions," scientists in Tainan, Taiwan report.
"Controlling the temperature and injection current makes it possible to stress the device and evaluate its characteristics after stressing. the dark current and responsivity of PDs change with the aging temperature and current. The aging current density is a dominant factor in reliability. This paper also conducts failure analysis to clarify the PD failure mechanisms. Optical microscope...
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Source: Electronics Newsweekly (2010-04-07)