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Recent Findings from V.V. Felmetsger and Co-Authors Highlight Research in Vacuum Technology
April 13th, 2011
"The authors investigate the microstructure, crystal orientation, and residual stress of reactively sputtered aluminum nitride (AlN) films having thicknesses as low as 200 down to 25 nm. A two-step deposition process by the dual cathode ac (40 kHz) powered S-gun magnetron enabling better conditions for AlN nucleation on the surface of the molybdenum (Mo) bottom electrode was developed to enhance crystallinity of ultrathin AlN films," scientists in Gilbert, United States report.
"Using the two-step process, the residual in-plane stress as well as the stress gradient through the film thickness can be effectively controlled. X-ray rocking curve measurements have shown that...
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Source: Electronics Newsweekly (2011-04-13)