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National Taipei University of Technology publishes research in solar engineering
September 24th, 2010
According to a study from Taipei, Taiwan, "Ga-doped CuInS2 films were prepared on indium-tin-oxide substrates by chemical-bath-deposition method. The XRD diffractograms demonstrate that CuInS2 is the major crystalline phase of the as-prepared films."
"In addition, the doping density and flat band potential of the Ga-doped CuInS2 electrodes were measured with impedance spectroscopy based on the Mott-Schottky equation. With Ga molar ratios in the bath solution higher than 0.2, the semiconductor property of the sample was changed from n- to p-type. Additionally, the values of energy band gap and carrier densities of the Ga-doped samples were found in the range of 1.50-1.51 eV...
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Source: Energy Weekly News (2010-09-24)